METHOD OF FORMING FILM, FILM FORMING APPARATUS AND STORAGE MEDIUM

摘要

Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed. There is provided a method of forming a film, comprising the step of carrying a substrate in a reaction chamber and mounting the same, the step of feeding a raw gas containing a compound of first metal into the reaction chamber to thereby cause the surface of the substrate to adsorb the compound of first metal, the step of bringing the compound of first metal into contact with a reducing plasma resulting from activation of a reducing gas to thereby obtain a first metal layer and the step of bringing a target electrode whose at least surface portion consists of a second metal different from the first metal into contact with a sputtering plasma and incorporating the thus ejected second metal into the first metal layer to thereby obtain an alloy layer, wherein this sequence of adsorption, reduction and alloy formation steps is carried out one or more times. By virtue of this method, even when the cohesive force of the first metal is large, any migration thereof on the substrate is suppressed to thereby realize formation of a continuous thin film of small thickness.