SUBSTRATE PROCESSOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a stable temperature reproducibility even when the light entrance surface of a radiation thermometer dirties or deterioration etc. occurs due to secular change. SOLUTION: A control means 300 controls to heat the wafer 200 of a substrate under process in a chamber every lamp zone 101-104 corresponding to division-controlled lamp 111, based on the measured temperatures of substrate measuring optical fiber type radiation thermometers 401-404. A temperature monitoring wafer 51 is provided separately from the wafer 200 in the chamber. Its temperature is measured by both characteristic thermocouple thermometer 52 and a test substrate measuring optical fiber type radiation thermometer to obtain the temperature difference thereof by a difference correcting circuit 59. The temperature difference is applied to temperature control meters 601-604 constituting the control means 300 to correct the measured temperatures of the test substrate measuring optical fiber type radiation thermometers 401-404 deviated from the actual values. A corrected control signal is applied to a power feedback circuit 70 constituting the control means 300 to control the power of the lamp 111 in each lamp zone 101-104 according to a power set signal. COPYRIGHT: (C)2006,JPO&NCIPI