| 摘要 |
A hollow cathode sputtering target is characterized by having an inner bottom surface with a surface roughness Ra of not more than 1.0 mum, preferably not more than 0.5 mum. This hollow cathode sputtering target has excellent film-forming characteristics and enables to obtain a sputtered film with excellent uniformity. Arcing, generation of particles and separation of a film redeposited on the bottom surface can be suppressed by using this hollow cathode sputtering target.
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