发明名称 |
METHOD FOR PRODUCING BONDED WAFER |
摘要 |
<p>A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9x10 18 atoms/cm 3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.</p> |
申请公布号 |
EP1667208(A1) |
申请公布日期 |
2006.06.07 |
申请号 |
EP20040787752 |
申请日期 |
2004.09.08 |
申请人 |
SUMCO CORPORATION |
发明人 |
ENDO, AKIHIKO;MORIMOTO, NOBUYUKI |
分类号 |
H01L21/762;(IPC1-7):H01L21/02;H01L27/12 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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