发明名称 |
Devices for an insulated dielectric interface between high-k material and silicon |
摘要 |
Methods and devices are described for an insulated dielectric interface between a high-k material and silicon for improving electrical characteristics of devices. A method includes forming an oxide layer on a silicon substrate using an in situ steam generation process, etching the oxide layer to form a reduced thickness oxide layer of less than 10 Angstroms, and annealing the reduced thickness oxide layer with ammonia. A semiconductor wafer comprises a silicon substrate, an oxide layer coupled to the silicon substrate where the oxide layer having a thickness of less than 10 Angstroms, and a high-k dielectric material deposited onto the oxide layer.
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申请公布号 |
US2006115937(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20060324934 |
申请日期 |
2006.01.04 |
申请人 |
BARNETT JOEL M;GARDNER MARK I;MOUMEN NAIM;GUTT JIM |
发明人 |
BARNETT JOEL M.;GARDNER MARK I.;MOUMEN NAIM;GUTT JIM |
分类号 |
H01L21/84;H01L21/28;H01L21/302;H01L21/31;H01L21/311;H01L21/314;H01L21/316;H01L21/336;H01L21/8242;H01L29/51 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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