发明名称 |
Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same |
摘要 |
A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
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申请公布号 |
US2006113527(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20050116326 |
申请日期 |
2005.04.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN KOOK M.;JEONG EUN J.;KIM CHANG J.;LEE EUN K. |
分类号 |
H01L51/00;H01B1/12 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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