发明名称 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
摘要 A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
申请公布号 US2006113527(A1) 申请公布日期 2006.06.01
申请号 US20050116326 申请日期 2005.04.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN KOOK M.;JEONG EUN J.;KIM CHANG J.;LEE EUN K.
分类号 H01L51/00;H01B1/12 主分类号 H01L51/00
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