Methods for reduced circuit area and improved gate length control

摘要

Semiconductor devices ( 102 ) are presented along with fabrication methods ( 202 ) therefor, in which a conductive contact structure ( 116 b) is formed with a lower contact surface ( 116 c) having a lateral contact dimension ( 152 ), where the contact structure ( 116 b) is at least partially coupled with a contact landing surface of a polysilicon structure ( 110 ) having a lateral contact landing surface dimension ( 150 ) that is less than about 140% of the lateral contact dimension ( 152 ) of the conductive contact structure ( 116 b).