发明名称 |
Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility |
摘要 |
The carrier mobility in transistor channel regions of Si-Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively or high tensilely stressed film, after post silicide spacer removal, over gate electrodes and strained Si source/drain regions of P-channel or N-channel transistors, respectively.
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申请公布号 |
US7053400(B2) |
申请公布日期 |
2006.05.30 |
申请号 |
US20040838330 |
申请日期 |
2004.05.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SUN SEY-PING;BROWN DAVID E. |
分类号 |
H01L31/072;H01L21/336;H01L21/8238;H01L29/10 |
主分类号 |
H01L31/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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