发明名称 VAPOR DEPOSITION OF DISSIMILAR MATERIALS.
摘要 A method for depositing a first material on a substrate includes providing the substrate in a deposition chamber. A molten body is formed between the substrate and a source of the first material by melting one or more second materials. A flow of the first material is passed through the molten body and from the molten body to the substrate as a vapor flow. An essentially non-expending portion of the molten body comprises an alloy having a melting temperature below a melting temperature of the first material.
申请公布号 MXPA05012357(A) 申请公布日期 2006.05.19
申请号 MX2005PA12357 申请日期 2005.11.16
申请人 UNITED TECHNOLOGIES CORPORATION 发明人 MONIKA D. KINSTLER
分类号 C23C14/32;(IPC1-7):C23C14/32 主分类号 C23C14/32
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