发明名称 |
VAPOR DEPOSITION OF DISSIMILAR MATERIALS. |
摘要 |
A method for depositing a first material on a substrate includes providing the substrate in a deposition chamber. A molten body is formed between the substrate and a source of the first material by melting one or more second materials. A flow of the first material is passed through the molten body and from the molten body to the substrate as a vapor flow. An essentially non-expending portion of the molten body comprises an alloy having a melting temperature below a melting temperature of the first material. |
申请公布号 |
MXPA05012357(A) |
申请公布日期 |
2006.05.19 |
申请号 |
MX2005PA12357 |
申请日期 |
2005.11.16 |
申请人 |
UNITED TECHNOLOGIES CORPORATION |
发明人 |
MONIKA D. KINSTLER |
分类号 |
C23C14/32;(IPC1-7):C23C14/32 |
主分类号 |
C23C14/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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