| 摘要 |
PROBLEM TO BE SOLVED: To provide methods of manufacturing a two-wavelength semiconductor laser device and a multiwavelength semiconductor laser device which have excellent crystallinity and easy laser alignment. SOLUTION: A method of manufacturing a multiwavelength semiconductor laser comprises: a step of providing a substrate 31 having an upper surface separated into at least first and second areas; a step of forming a first dielectric mask 32 on the substrate to expose the first area 31a only; a step of growing epitaxial layers 33a, 34a, 35a, and 36a for a first semiconductor laser on the first area of the substrate; a step of forming a second dielectric mask 37 on the substrate to expose the second area 31b only; and a step of growing epitaxial layers 33b, 34b, 35b, and 36b for a second semiconductor laser on the second area of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI |
