| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can remove certainly its unreactive high-melting-point metal films, etc. by etching them. SOLUTION: The manufacturing method of a semiconductor device has a process for preparing a processed substrate having diffusion layers 34n, 34p for its source/drain, a process for forming a high-melting-point metal film on the processed substrate, a process for forming silicide films 52n, 52p by the reactions of the high-melting-point metal film on the diffusion layers, and a process for removing unreactive high-melting-point metal films 51a left in the process for removing the silicide films because the high-melting-point metal film has not reacted on the diffusion layers. The process for removing the unreactive high-melting-point metal films is performed by using the etching liquid having ozone introduced in a sulfuric-acid liquid by bubbling. COPYRIGHT: (C)2006,JPO&NCIPI
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