发明名称 |
High-voltage diodes formed in advanced power integrated circuit devices |
摘要 |
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
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申请公布号 |
US7045830(B1) |
申请公布日期 |
2006.05.16 |
申请号 |
US20040005755 |
申请日期 |
2004.12.07 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
CAI JUN;HARLEY-STEAD MICHEAL;HOLT JIM G. |
分类号 |
H01L29/43 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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