| 摘要 |
<p>A method of manufacturing a semiconductor is provided. The method includes the steps of forming a priming insulation film on a substrate, forming a first insulation film on the priming insulation film, forming an opening with a diameter of d<SUB>1 </SUB>in the first insulation film, and forming a second insulation film on the first insulation film including the opening The film thickness distribution of the second insulation film in the step of forming the second insulation film is ±y %, wherein the diameter d<SUB>1 </SUB>of the opening satisfies the following relationship: d<SUB>1</SUB><=6500/y+85 nm.</p> |
