| 摘要 |
A semiconductor memory device having a multiport memory includes a plurality of memory cells MC arranged in columns and rows, a plurality of first word lines WLA 0 -WLAn connected to a first port 13 a, and a plurality of second word lines WLB 0 -WLBn connected to a second port 13 b. Each of a plurality of first word lines WLA 0 -WLAn and each of a plurality of second word lines WLB 0 -WLBn are arranged alternately in a planar layout. A semiconductor memory device is thus obtained that allows a coupling noise between interconnections to be reduced without an increase in memory cell area.
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