SEMI-CONDUCTOR ELEMENT AND ASSOCIATED PRODUCTION METHOD

摘要

The invention relates to a semi-conductor element and an associated production method. Source/drain areas (S,D) are arranged at a distance from each other in a carrier substrate (1) in order to define a channel area and a gate dielectric (2) is formed on the surface of the channel area. A gate stack comprising at least one control layer (3, 3a) is located on the surface of the gate dielectric and a spacer structure which is embodied on the lateral walls of the gate stack comprises an air gap spacer (6a). The electric properties of the semi-conductor element can be improved with reduced costs by means of the shading spacer (7) which shades at least the base area (BB) of the airgap spacer.