发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer. <IMAGE> |
申请公布号 |
EP1569309(A4) |
申请公布日期 |
2006.05.03 |
申请号 |
EP20040725998 |
申请日期 |
2004.04.06 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HASEGAWA, YOSHIAKI;YOKOGAWA, TOSHIYA;YAMADA, ATSUSHI |
分类号 |
H01S5/02;H01S5/22;H01S5/223;H01S5/30;H01S5/323;H01S5/343 |
主分类号 |
H01S5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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