发明名称 |
Method of forming a conductive pattern by removing a compound with heat in a substantially inert atmosphere |
摘要 |
A method for forming a conductive or magnetic pattern for a semiconductor or other electronic device includes patterning a mask layer outwardly from a conductive layer of the semiconductor device. The patterning defines portions of the conductive layer where vias through the conductive layer are desired. The method also includes exposing the semiconductor device to a plasma. The plasma converts the unmasked portions of the conductive layer into a compound. The method further includes exposing the semiconductor device to a treatment process to selectively remove the compound. The mask layer may be removed either before or after removal of the compound, thereby providing the unmasked conductive layer in the desired pattern.
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申请公布号 |
US7037832(B1) |
申请公布日期 |
2006.05.02 |
申请号 |
US20040753214 |
申请日期 |
2004.01.05 |
申请人 |
THE TEXAS A&M UNIVERSITY SYSTEM |
发明人 |
KUO YUE |
分类号 |
H01L21/44;H01L21/321;H01L21/3213;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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