发明名称 COMPOSITION FOR SURFACE HYDROPHOBIZING, SURFACE HYDROPHOBIZING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a composition for surface hydrophobizing intended for repairing damage in a siloxane insulating layer following etching/ashing, which is used for an electronic device such as a semiconductor device, a surface hydrophobizing method, a semiconductor device and its manufacturing method. SOLUTION: The composition comprises a silane compound, e.g. bis(trimethylsilyl)malonate, 1,2-bis(trimetylsiloxy)ethane, tetrakis(trimethylsiloxy)titanium, etc. and an organic solvent. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006111740(A) 申请公布日期 2006.04.27
申请号 JP20040301074 申请日期 2004.10.15
申请人 JSR CORP 发明人 HATTORI SEITARO;TOKUSHIGE NAOHISA
分类号 C09K3/18;H01L21/768 主分类号 C09K3/18
代理机构 代理人
主权项
地址