SYSTEM AND METHOD FOR ANALYZING PHOTOMASK GEOMETRIES
摘要
After simulated geometry (106) has been generated, simulated geometry (106) may be modified to generate a predicted resulting geometry (108). Predicted resulting geometry (108) includes a predication of the geometry that would be formed in patterned layer (58) of photomask (52) if photomask (52) were processed using modified geometry (102) as input for imaging<sup
申请公布号
WO2006041868(A1)
申请公布日期
2006.04.20
申请号
WO2005US35737
申请日期
2005.10.05
申请人
TOPPAN PHOTOMASKS, INC.;NAKAGAWA, KENT;BUCK, PETER