发明名称 PIEZOELECTRIC THIN FILM RESONATOR WITH MASS LOADING IN PERIMETER
摘要 PROBLEM TO BE SOLVED: To improve a quality factor Q in a piezoelectric thin film resonator. SOLUTION: An FBAR resonator structure comprises two electrodes sandwiching a piezoelectric material, and the intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into concentric areas (perimeters, namely, into a frame region and a central region). An annulus is added to one of the two conducting electrodes, thereby improving electric performance from a point of view of Q. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006109472(A) 申请公布日期 2006.04.20
申请号 JP20050286738 申请日期 2005.09.30
申请人 AGILENT TECHNOL INC 发明人 FENG HONGJUN;FAZZIO R SHANE;RUBY RICHARD;BRADLEY PAUL
分类号 H03H9/17;H01L41/09;H01L41/187;H03H9/02;H03H9/13 主分类号 H03H9/17
代理机构 代理人
主权项
地址