AMIDINATE LIGAND CONTAINING CHEMICAL VAPOR DEPOSITION PRECURSORS

摘要

The present invention is directed to amidinate ligand containing precursors for use in chemical vapor deposition. More particularly, the present invention is directed to amidinate ligand containing precursors such as metalloamidinates as chemical vapor deposition precursors. Suitable precursors for chemical vapor deposition such as atmospheric pressure chemical vapor deposition (APCVD) of films of metals, metal oxides, and metal nitrides, in which the physical properties of the precursors (or films) may be controlled by modification of the precursor ligand array are provided.