| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon epitaxial wafer which can correctly inspect local crystal defects, etc. by an easy operation and eventually can keep a loss caused by unnecessary mirror polishing and epitaxial growth process performed on a defective chemical etch wafer lot to the minimum. SOLUTION: Some of wafers are picked up as sample wafers from the chemical etch wafer lot. These sample wafers are first formed with a silicon epitaxial layer for inspection and then are inspected. By forming the silicon epitaxial layer for inspection on the sample wafers, minute crystal defects existing on the surface of the wafers which are in a state of chemical etch wafers are enlarged in size on the basis of a crystal growth mechanism and thereby can be very easily observed, which remarkably increase the inspection accuracy. Consequently, a loss due to inspection failure (a loss due to calling-back of defective products shipped and compensation for these products, and a loss due to rejection of good products) can be remarkably reduced. COPYRIGHT: (C)2006,JPO&NCIPI
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