发明名称 Semiconductor device and method of manufacturing the same
摘要 To provide an active matrix type liquid crystal display device having fine display performance, an interlayer insulating film 104 covering TFTs 102, 103 formed on a substrate 101 is first flattened by mechanical polishing typified by a CMP. Then pixel electrodes 106, 107 are formed thereon, and further, an insulating layer 108 covering the pixel electrodes is formed. And then, the insulating layer 108 is flattened by second mechanical polishing so that the surfaces of the pixel electrodes and the surface of the insulating layers 112, 113 form the same plane. By this, a difference in level disappears, and it is possible to prevent lowering of contrast or the like due to poor orientation of a liquid crystal material, diffused reflection of light, and the like.
申请公布号 US2006077336(A1) 申请公布日期 2006.04.13
申请号 US20050288217 申请日期 2005.11.29
申请人 发明人 HIRAKATA YOSHIHARU;YAMAZAKI SHUNPEI
分类号 G02F1/13 主分类号 G02F1/13
代理机构 代理人
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