| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor-type three-axis acceleration sensor that has low offset voltage with a high power and has a sufficient temperature characteristic of offset voltage. <P>SOLUTION: The acceleration sensor comprises a support frame section formed in a rim section of a silicon single crystal substrate, a mass section formed in a center section, a thin beam-like flexible section that is disposed over the mass section and the support frame section and connects the mass section to the support frame section, and a plurality of pairs of piezoresistors and a pipe section formed on the upper side of an elastic section. A plurality of piezoresistors are disposed at positions symmetric with respect to the center line of the flexible section, one end of each of the plurality of piezoresistors is arranged in a boundary region between the support frame section and the flexible section or between the mass section and the flexible section, the plurality of piezoresistors are connected in series on a high-concentration diffusion layer on the flexible section, and the connecting part of the piezoresistors with a metal pipe is preferably disposed in the mass section or the support frame section. The boundary region means a dimension range from a boundary where the support frame section comes into contact with the flexible section to the support frame section side and the flexible section side by about twice in the width direction of the piezoresistors, and indicates the range of substantially ±10 μm boundary. The boundary region between the mass section and the flexible section is similar. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
