PLATE TYPE SUBSTRATE FOR USING TO FORM SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain both of the reduction of warpage of a plate type substrate and the improvement of crystallinity in a main semiconductor region.

SOLUTION: The main semiconductor region for forming the principal part of a semiconductor element is arranged on a silicon substrate through a buffer region 3 constituted of a nitride semiconductor. The buffer region 3 is formed of the alternative laminate of a plurality of first buffer regions 9 of a multilayered structure, and a plurality of second buffer regions 10 of a single layered structure. Cavities 15 are comprised in the second buffer regions 10. The second buffer regions 10 having the cavities 15 are arranged between mutual first buffer regions 9 of the multilayered structure whereby the warpage of the semiconductor substrate is improved and the crystallinity of the main semiconductor region is improved.

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