发明名称 |
Semiconductor device and method of manufacturing semiconductor device |
摘要 |
A semiconductor device including an NMOS region and a PMOS region in the same substrate, wherein the semiconductor device includes a strained Si layer which is provided on the substrate in the NMOS region and in which the surface has a plane orientation different from that of the substrate, and a strained SiGe layer which is provided on the substrate in the PMOS region and which is composed of a stained layer having the same plane orientation as that of the surface of the substrate; and a method of manufacturing the same.
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申请公布号 |
US2006076622(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050241108 |
申请日期 |
2005.09.30 |
申请人 |
WANG JUNLI;KATAOKA TOYOTAKA;SAITO MASAKI |
发明人 |
WANG JUNLI;KATAOKA TOYOTAKA;SAITO MASAKI |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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