发明名称 |
Method of etching back of semiconductor wafer |
摘要 |
A resist pattern is formed at an outermost peripheral end of the surface of a wafer. Thereafter, the back of the wafer is back-etched using chemicals to thin the wafer. A passivation film is left behind only at scribe lines for separating semiconductor chips located at the outermost peripheral end of the wafer surface and thereafter the wafer is back-etched.
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申请公布号 |
US7022614(B2) |
申请公布日期 |
2006.04.04 |
申请号 |
US20020259614 |
申请日期 |
2002.09.30 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
UCHIYAMA AKIRA;KAMATA YUTAKA |
分类号 |
H01L21/302;H01L21/306;H01L21/314;H01L21/78 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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