发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent the backflow of an exhaust gas and prevent a pollution due to the particles of wafers when a chamber is returned from a decompressed state to an atmospheric-pressure state in substrate processing apparatus with the airtight chamber housing the wafers under the decompressed state. SOLUTION: The substrate processing apparatus has the airtight chamber 1 housing substrates 15, a gas supply system 22 supplying the inside of the chamber with a gas, an exhaust system 26 exhausting the inside of the chamber, and a sensor 27 detecting a pressure in the chamber. The substrate processing apparatus further has a pressure relief valve 35 relieving the pressure in the chamber, and a control means 19 for controlling the pressure relief valve so as to be operated after a fixed time passes after the sensor detects an atmospheric pressure when the pressure in the chamber is returned from the decompressed state to the atmospheric pressure. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006086186(A) 申请公布日期 2006.03.30
申请号 JP20040266701 申请日期 2004.09.14
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKAZAWA HIROMASA;NISHIDA MASAYA
分类号 H01L21/205;C23C16/44;H01L21/22 主分类号 H01L21/205
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