发明名称 Flip FERAM cell and method to form same
摘要 A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.
申请公布号 US2006049443(A1) 申请公布日期 2006.03.09
申请号 US20050263024 申请日期 2005.10.31
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ADKISSON JAMES W.;BLACK CHARLES T.;GRILL ALFRED;MANN RANDY W.;NEUMAYER DEBORAH A.;PRICER WILBUR D.;SAENGER KATHERINE L.;SHAW THOMAS M.
分类号 H01L29/94;H01L21/02;H01L27/06;H01L27/115;H01L29/76 主分类号 H01L29/94
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