| 摘要 |
This invention presents a power semiconductor for preventing punchthrough in the channel area. For this purpose, the invention presents a power semiconductor possessing a high concentration substrate area of conduction type 1 ; a primary epitaxial area of conduction type 1 , formed in low concentration on top of the drain area; a secondary epitaxial area of conduction type 1 , formed in medium concentration on top of the primary epitaxial area and with a doping profile that is actually uniform over the thickness; multiple secondary body areas of conduction type 2 , formed within the secondary epitaxial area; and two source areas of conduction type 1 , formed in high concentration along both edges of the body areas.
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