Semiconductor device - with basic oxide stabilising layer on upper surface

摘要

The diode, transistor or integrated circuit is covered with a layer of oxide of Gp. I or Gp. II, Bi, Th or rare earth metal. Layers of SiO2 or Si3N4 are opt. added. The substrate, Ge, Si, a 3a-5b or 2a-4b alloy is coated by spluttering or vacuum deposition of the metal under vacuum and this is oxidised in situ.