发明名称 |
APPARATUS AND PLASMA ASHING PROCESS FOR INCREASING PHOTORESIST REMOVAL RATE |
摘要 |
A plasma ashing process for removing photoresist material and post etch residues from a substrate comprising carbon, hydrogen, or a combination of carbon and hydrogen, wherein the substrate comprises a low k dielectric layer, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate. |
申请公布号 |
WO2006026765(A2) |
申请公布日期 |
2006.03.09 |
申请号 |
WO2005US31492 |
申请日期 |
2005.09.01 |
申请人 |
AXCELIS TECHNOLOGIES, INC.;FERRIS, DAVID;HAMMAR, PHILIP;BECKNELL, ALAN |
发明人 |
FERRIS, DAVID;HAMMAR, PHILIP;BECKNELL, ALAN |
分类号 |
G03F7/42;H01J37/32;H01L21/311 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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