发明名称 |
Ampholytic buffer having high buffering capacity and high conductivity in isoelectric form |
摘要 |
Ampholytic buffers having a high buffering capacity and a high conductivity in the isoelectric state were synthesized by creating molecules in which four or more bonds separate the charge-carrying or chargeable atoms of the pI-determining weak electrolyte functional groups and, simultaneously, the charge-carrying or chargeable atom of the weak or strong electrolyte charge-balancing functional group.
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申请公布号 |
US2006049052(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20050219351 |
申请日期 |
2005.09.02 |
申请人 |
THE TEXAS A&M UNIVERSITY SYSTEM |
发明人 |
VIGH GYULA;LALWANI SANJIV K. |
分类号 |
C07K1/26;G01N27/447 |
主分类号 |
C07K1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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