发明名称 |
Method for making a semiconductor device having a high-k gate dielectric |
摘要 |
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
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申请公布号 |
US2006051882(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20050210220 |
申请日期 |
2005.08.22 |
申请人 |
DOCZY MARK L;DEWEY GILBERT;DATTA SUMAN;PAE SANGWOO;BRASK JUSTIN K;KAVALIEROS JACK;METZ MATTHEW V;SHERRILL ADRIAN B;KUHN MARKUS;CHAU ROBERT S |
发明人 |
DOCZY MARK L.;DEWEY GILBERT;DATTA SUMAN;PAE SANGWOO;BRASK JUSTIN K.;KAVALIEROS JACK;METZ MATTHEW V.;SHERRILL ADRIAN B.;KUHN MARKUS;CHAU ROBERT S. |
分类号 |
H01L21/00;H01L21/20;H01L21/336 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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