| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile magnetic memory device which can realize stable writing operation in a toggle mode. SOLUTION: The toggle mode writing type nonvolatile magnetic memory device comprises a tunnel magnetic resistance element TMJ having a laminated structure comprised of a magnetization fixed layer 33, a tunnel insulating film 34 and a recording layer 35, a first wiring RWL, and a second wiring BL. It writes an information in the recording layer 35 by changing the magnetization direction of the recording layer 35 according to a magnetic field that is generated by applying current for the first wiring RWL and the second wiring BL. The memory device also comprises a bias magnetic field producing layer 40 formed on the second wiring BL, or above the second wiring BL with an insulating layer in between. Because bias magnetic field produced by the bias magnetic field producing layer 40 is applied for the recoding layer 35, a switching magnetic field is reduced for changing the magnetization direction of the recoding layer 35. COPYRIGHT: (C)2006,JPO&NCIPI
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