| 摘要 |
A field effect transistor according to a preferable mode of the present invention employs an organic film, which is provided on an insulating layer having a plurality of insulating regions with different surface energy densities, and is aligned. Each of the plurality of insulating regions with different surface energy densities has a difference in surface energy density of preferably 10 dyne/cm or more, and a difference in height of preferably 0.5 nm or more and 100 nm or less. A compound constituting the organic film may have electrical conductivity, may be a polymer compound, and may exhibit liquid crystallinity. The preferable mode of the present invention provides a highly smooth organic film and a field effect transistor using the organic film.
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