Method for reading electrically programmable and erasable memory cells with anticipated bit line precharge

摘要

The method involves pre-charging two bit lines (BLi, j) to which memory cells (CELi, j, k) are connected, by sense amplifiers (SAi). Only one memory cell on one pre-charged bit line is read with the help of one amplifier. A column decoder is used for connecting each sense amplifier to the bit lines during pre-charging phase, and for connecting each amplifier to only one bit line, during reading phase. An independent claim is also included for a sequential access memory including memory cells.