| 摘要 |
Disclosed is a method for manufacturing a semiconductor device. The method comprises the steps of: providing a first substrate and a second substrate; forming a capacitor and a gate line on a first surface of the first substrate; forming an insulating layer on a resultant structure of the first substrate; bonding the second substrate to the insulating layer of the first substrate; turning a resultant structure over in such a manner that a second surface of the first substrate is an upper surface of the resultant structure; polishing the second surface of the first substrate by a predetermined thickness; forming an isolation layer for defining an active region by performing an isolation process with respect to the second surface of the first substrate for which a polishing process is finished; and forming a bit line on the active region in the first substrate.
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