| 摘要 |
A mixer circuit is configured by use of a CMOS transistor (800), which comprises a combination of a p-channel MOS transistor (840A) and an n-channel MOS transistor (840B) each including a semiconductor substrate (810A,810) having at least two crystal surfaces and also including a gate insulation film (820A) located on the semiconductor substrate and formed for the at least two crystal surfaces, wherein the channel width of a channel formed in the semiconductor substrate along the gate insulation film is shown by the total sum of the channel widths of channels formed for the at least two crystal surfaces. This configuration can reduce 1/f noise occurring in the transistor elements, DC offsets occurring in output signals due to variations of the electric characteristics of the transistor elements, and signal distortions based on a channel length modulation effect.
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