发明名称 METHOD FOR MANUFACTURING PHASE SHIFT MASK, AND SEMICONDUCTOR APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To manufacture a phase shift mask with high controllability, high accuracy and high quality, which contains a mixture of a chromeless transmissive phase shifter by engraving a quartz substrate or an edge enhanced phase shifter. <P>SOLUTION: A method for manufacturing the phase shift mask includes: etching a quartz substrate 1 by using a light shielding pattern comprising a chromium pattern 32 as a mask; applying a second resist film 22 onto the substrate by using a positive resist to form a second resist pattern 221 having the covering ratio not more than 70% with respect to the whole area of the mask, and a dummy pattern 222; selectively dry etching the light shielding pattern 31 by using the second resist pattern 221 as a mask; and stripping the second resist pattern 221 and the dummy pattern 222. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006053342(A) 申请公布日期 2006.02.23
申请号 JP20040234839 申请日期 2004.08.11
申请人 FUJITSU LTD 发明人 DOI KAZUMASA
分类号 G03F1/29;G03F1/34;G03F1/68;G03F1/80;G03F7/20;H01L21/027 主分类号 G03F1/29
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