| 摘要 |
A protective film is formed on a surface of a semiconductor device corresponding to at least a portion that is not to be disordered, by arranging a heat source on a path through which a precursor of the protective film to be formed passes, to cause a decomposition reaction of the precursor in the presence of the heat source, and by exposing the surface of the semiconductor device to the atmosphere after the decomposition reaction. A portion to be disordered is disordered using a thermal treatment.
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