发明名称 FILM-FORMING APPARATUS
摘要 PROBLEM TO BE SOLVED: To inhibit the formation of particles by inhibiting a material gas from causing a reaction in a gas supply zone in a CVD apparatus. SOLUTION: The CVD apparatus 10 has double-structured gas supply pipes 26 and 27 for supplying the material gas to the gas supply zone 51. The material gas passing through the gas supply pipes 26 and 27 passes through minute orifices 28 and 29 placed in its tip, then arrives at a film-forming zone 52 and forms a thin film on wafers 41 and 42. The material gas keeps its predetermined high pressure until arriving at the orifices 28 and 29 of the gas supply pipes 26 and 27, and is cooled down to a reaction temperature or lower due to adiabatic expansion in the gas supply zone 51. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007100172(A) 申请公布日期 2007.04.19
申请号 JP20050292181 申请日期 2005.10.05
申请人 DENSO CORP 发明人 TORII MIKIHIRO
分类号 C23C16/455;C30B25/14;H01L21/205 主分类号 C23C16/455
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