| 发明名称 |
HIGH POWER ALINGAN BASED MULTI-CHIP LIGHT EMITTING DIODE |
| 摘要 |
A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed. |
| 申请公布号 |
KR20060015592(A) |
申请公布日期 |
2006.02.17 |
| 申请号 |
KR20057021269 |
申请日期 |
2005.11.09 |
| 申请人 |
ELITE OPTOELECTRONICS, INC. |
发明人 |
LIU HENG |
| 分类号 |
F21L4/02;H01L25/075;H01L33/20;H01L33/46;H01L33/60 |
主分类号 |
F21L4/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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