| 发明名称 |
METHOD FOR STABILIZING OXIDE-SEMICONDUCTOR INTERFACE BY USING GROUP 5 ELEMENT AND STABILIZED SEMICONDUCTOR |
| 摘要 |
The present invention provides a method for stabilizing an oxide-semiconductor interface, which is free from the formation of an interface layer (reactive layer) between a semiconductor and an interface oxide and which thereby allows satisfactory exhibition of performance capabilities of a functional oxide and achievement of the stability of oxide-semiconductor interface, yet independent of temperature; it also provides a stabilized semiconductor. <IMAGE> |
| 申请公布号 |
EP1237183(A4) |
申请公布日期 |
2006.02.15 |
| 申请号 |
EP20000974913 |
申请日期 |
2000.11.10 |
| 申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;JAPAN AS REPRESENTED BY DIRECTOR GENERAL OF ANATIONAL RESEARCH INSTITUTE FOR METALS |
发明人 |
CHIKYO, TOYOHIRO;YOSHIMOTO, MAMORU |
| 分类号 |
H01L21/316;H01L21/8242;H01L27/10;H01L27/108;H01L29/51 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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