发明名称 |
Magnetoresistive memory device and method for fabricating the same |
摘要 |
Embodiments of the invention include magnetoresistive memory cells having magnetic focusing spacers are formed on sidewalls thereof. Therefore, magnetic fields generated by a bit line and a digit line are focused by the magnetic focusing spacers and efficiently transferred to the magnetoresistive memory cell. In addition, an interlayer dielectric layer surrounding the magnetoresistive memory cell may be formed of high permeability material, thereby efficiently transferring magnetic field.
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申请公布号 |
US6998276(B2) |
申请公布日期 |
2006.02.14 |
申请号 |
US20050091966 |
申请日期 |
2005.03.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYEONG-JUN |
分类号 |
H01F10/20;H01L21/00;G11C11/00;G11C11/15;G11C11/16;H01F41/14;H01L21/8246;H01L27/105;H01L27/22;H01L29/76;H01L29/82;H01L43/08;H01L43/12 |
主分类号 |
H01F10/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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