发明名称 MANUFACTURING METHOD OF SURFACE ACOUSTIC WAVE DEVICE AND SURFACE ACOUSTIC WAVE DEVICE MADE USING THE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To reduce the scattering of a resonant frequency of a surface acoustic wave device formed on a piezoelectric substrate. SOLUTION: A manufacturing method of a surface acoustic wave device includes the following steps: a film forming process for forming a conductive film on the surface of a piezoelectric substrate (step 12); a resist film forming process for forming a resist film on the conductive film (step 14); a resist film patterning process which exposes a pattern prepared in a photo mask to the resist film by reducing and projecting and develops it (step 16); an electrode forming process for etching the conductive film with a patterned resist film as a mask (step 18); a frequency measurement process for measuring a resonant frequency of the surface acoustic wave device formed on the piezoelectric substrate (step 24); a voltage operation process for obtaining an anodic oxidation voltage by operating the amount of the anodic oxidation of the electrode from the measured resonant frequency and a predetermined target resonant frequency (step 26); and an anodic oxidation process for detecting the end of the oxidation reaction of the electrode and finishing the anodic oxidation (step 28). COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006033791(A) 申请公布日期 2006.02.02
申请号 JP20050015569 申请日期 2005.01.24
申请人 SEIKO EPSON CORP 发明人 MITSUI YUJI
分类号 H03H3/10;H03H9/00 主分类号 H03H3/10
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