Method for forming C-MOS transistor preventing a gate thinning,申请号KR20030083042-传众专利搜索

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发明名称	Method for forming C-MOS transistor preventing a gate thinning
摘要
申请公布号	KR100546397(B1)	申请公布日期	2006.01.26
申请号	KR20030083042	申请日期	2003.11.21
申请人		发明人
分类号	H01L21/8238;H01L21/311	主分类号	H01L21/8238
代理机构		代理人
主权项
地址

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