SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor devices that enables small, inexpensive, high performance, and high value-added bipolar transistors to be easily manufactured in the CMOS process. SOLUTION: This method partially removes a thick Locos oxide film formed on the well by using a mask for forming the emitter P+domain, then injects P+impurity in the second silicon surface from which this oxide film has been removed so that the P+emitter domain can be formed in a deep location of the silicon. COPYRIGHT: (C)2006,JPO&NCIPI