发明名称 A PROCESS FOR THE MANUFACTURING OF DENSE SILICON CARBIDE
摘要 <p>A method of producing a densified SiC article is provided. Near-net shape porous silicon carbide articles are produced and densified using the developed method. A substantial number of pores within the porous near-net shape silicon carbide article are filled (impregnated) with a carbon precursor, a silicon carbide precursor, or a mixture of both. The carbon precursor can be liquid or gas. The filled SiC preform is heated to convert the carbon or silicon carbide precursor to porous carbon or SiC preform inside the pores of the net-shape silicon carbide article. The impregnation/pyrolysis cycle is repeated until the desired amount of carbon and/or silicon carbide is achieved. In case of a carbon or a mixture of silicon carbide/carbon precursor is used, the pyrolyzed near-net shape silicon carbide article is then contacted with silicon in an inert atmosphere. The silicon diffuses through the pyrolyzed near-net shape silicon carbide article and reacts with the carbon contained within the pores of the porous SiC preform producing a new phase of silicon carbide within the pores of the near-net shape silicon carbide article. The produced silicon carbide is a near-net dense silicon carbide article.</p>
申请公布号 WO2006004999(A1) 申请公布日期 2006.01.12
申请号 WO2005US23490 申请日期 2005.06.30
申请人 POCO GRAPHITE, INC.;RASHED, ABUAGELA, H.;SHEPPARD, REX, G.;BRAY, DONALD, J. 发明人 RASHED, ABUAGELA, H.;SHEPPARD, REX, G.;BRAY, DONALD, J.
分类号 (IPC1-7):C04B35/565;C04B38/00;C04B41/51 主分类号 (IPC1-7):C04B35/565
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