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发明名称
Flash memory
摘要
Flash memory supporting methods for erasing memory cells using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
申请公布号
US2006007750(A1)
申请公布日期
2006.01.12
申请号
US20050219020
申请日期
2005.09.01
申请人
发明人
MIHNEA ANDREI;CHEN CHUN
分类号
G11C11/34
主分类号
G11C11/34
代理机构
代理人
主权项
地址
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